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Hot-Carrier Effects in MOS Devices

Authors: Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada Publisher: Elsevier Science Publication date: 1995 Publication language: Angielski Number of pages: 329 Publication formats: EAN: 9780080926223 ISBN: 9780080926223 Category: Instruments & instrumentation engineering Materials science Physical chemistry Spectrum analysis, spectrochemistry, mass spectrometry Condensed matter physics (liquid state & solid state physics) Educational: IT & computing, ICT Electronics & communications engineering Quantity surveying Publisher's index: C2009-0-21351-1 Bibliographic note: -


The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world.

This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

  • Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book
  • The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field
  • The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions
  • Provides the most complete review of device degradation mechanisms as well as drain engineering methods
  • Contains the most extensive reference list on the subject


  • Front Cover 2
  • Hot-Carrier Effects in MOS Devices 5
  • Copyright Page 6
  • Table of Contents 7
  • Preface 13
  • Chapter 1. MOS Device Fundamentals 15
    • 1.1 From Discrete to ULSI 15
    • 1.2 Physics of the MOS Diode 16
    • 1.3 Principles of the MOSFET 37
    • 1.4 Survey of Device and Circuit Reliability Issues Related to Hot-Carrier Effects 54
    • 1.5 Summary 56
  • Chapter 2. Hot-Carrier Injection Mechanisms 57
    • 2.1 Introduction 57
    • 2.2 Avalanche Breakdown 58
    • 2.3 Hot-Carrier Injection Mechanisms and Gate Currents 63
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Author's affiliation

Eiji Takeda: Hitachi Ltd.
Cary Y. Yang: Santa Clara University
Akemi Miura-Hamada: Hitachi Ltd.